Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substratesKIM, Byung-Jae; KIM, Hong-Yeol; KIM, Jihyun et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 205-207, issn 0022-0248, 3 p.Conference Paper

Liquid Slip on a Nanostructured SurfaceDOO JIN LEE; KI YEON CHO; JANG, Soohwan et al.Langmuir. 2012, Vol 28, Num 28, pp 10488-10494, issn 0743-7463, 7 p.Article

Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility TransistorsDOUGLAS, E. A; CHANG, C. Y; PEARTON, S. J et al.Microelectronics and reliability. 2012, Vol 52, Num 1, pp 23-28, issn 0026-2714, 6 p.Conference Paper

Annealing effect on conductivity behavior of Li-doped ZnO thin film and its application as ZnO-based homojunction deviceTSAI, Shu-Yi; HON, Min-Hsiung; LU, Yang-Ming et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 85-89, issn 0022-0248, 5 p.Conference Paper

Growth behavior and growth rate dependency in LEDs performance for Mg-doped a-plane GaNSONG, Keun-Man; KIM, Jong-Min; LEE, Dong-Hun et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 135-139, issn 0022-0248, 5 p.Conference Paper

Luminous properties of Sr_1-xZn_xSe:Eu²⁺ phosphors for LEDs applicationHONG JEONG YU; CHUNG, Wonkeun; SUN HEE PARK et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 77-80, issn 0022-0248, 4 p.Conference Paper

Photoluminescence and structural properties of Ca₃Y(VO₄)₃: RE³⁺ (=Sm³⁺, Ho³⁺ and Tm³⁺) powder phosphors for tri-colorsVENGALA RAO BANDI; BHASKAR KUMAR GRANDHE; JAYASIMHADRI, M et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 120-123, issn 0022-0248, 4 p.Conference Paper

Spontaneous formation of GaN nanostructures by molecular beam epitaxyKESARIA, Manoj; SHETTY, Satish; SHIVAPRASAD, S. M et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 191-194, issn 0022-0248, 4 p.Conference Paper

Crystalline dependence of optical and interfacial properties of InGaN/GaN quantum wells on nonpolar a-plane GaN/r-sapphireLEE, Sung-Nam; KIM, Jihoon; KIM, Hyunsoo et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 19-22, issn 0022-0248, 4 p.Conference Paper

Growth of p-CdTe thin films on n-GaN/sapphireJUNG, Younghun; CHUN, Seunju; KIM, Donghwan et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 69-72, issn 0022-0248, 4 p.Conference Paper

Photo-enhanced chemical etched GaN LED on silicon substrateKIM, Hong-Yeol; MASTRO, Michael A; HITE, Jennifer et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 58-61, issn 0022-0248, 4 p.Conference Paper

Structural properties of the epitaxial CuCr_0.95Mg_0.05O₂ thin films on c-plane sapphire substrates by pulsed laser depositionKIM, Se-Yun; SUNG, Sang-Yun; JO, Kwang-Min et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 9-13, issn 0022-0248, 5 p.Conference Paper

Synthesis and luminescence properties of cinnamide based nanohybrid materials containing Eu (II) ionsKIRAN KUMAR, A. B. V; JAYASIMHADRI, M; CHA, Hyeongrae et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 128-134, issn 0022-0248, 7 p.Conference Paper

Fabrication of p-n junctions in as-grown ZnMgO/ZnO filmsHYUCK SOO YANG; LI, Y; NORTON, D. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 59411P.1-59411P.7, issn 0277-786X, isbn 0-8194-5946-1, 1VolConference Paper

AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stressDOUGLAS, E. A; CHANG, C. Y; KIM, Jinhyung et al.Microelectronics and reliability. 2011, Vol 51, Num 2, pp 207-211, issn 0026-2714, 5 p.Conference Paper

Application of electrolytic in-process dressing (ELID) grinding and chemical mechanical polishing (CMP) process for emerging hard-brittle materials used in light-emitting diodesLEE, Hyunseop; KASUGA, Hiroshi; OHMORI, Hitoshi et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 140-146, issn 0022-0248, 7 p.Conference Paper

Effect of substitution of nitrogen ions to red-emitting Sr₃B₂O_6-3/2xN_x:Eu²⁺ oxy-nitride phosphor for the application to white LEDSANG HOON JUNG; DONG SEOK KANG; DUK YOUNG JEON et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 116-119, issn 0022-0248, 4 p.Conference Paper

Improved sorption characteristics of NH₃ molecules on the solution-processed graphene sheetsKO, Geunwoo; JUNG, Younghun; LEE, Kwan-Young et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 208-211, issn 0022-0248, 4 p.Conference Paper

Improvement on the synthesis technique of ultrananocrystalline diamond films by using microwave plasma jet chemical vapor depositionLIN, Chii-Ruey; LIAO, Wen-Hsiang; WEI, Da-Hua et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 212-217, issn 0022-0248, 6 p.Conference Paper

Influence of Al₂O₃ additions on the crystallization mechanism and properties of diopside/anorthite hybrid glass-ceramics for LED packaging materialsMINA KANG; KANG, Seunggu.Journal of crystal growth. 2011, Vol 326, Num 1, pp 124-127, issn 0022-0248, 4 p.Conference Paper

Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVDSON, Ji-Su; KWANG HYEON BAIK; YONG GON SEO et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 98-102, issn 0022-0248, 5 p.Conference Paper

Study on photoluminescence of GaN-based UV-LEDs with refractive index gradient polymeric nanopatternsPARK, Manshik; YU, Guiduk; SHIN, Kyusoon et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 28-32, issn 0022-0248, 5 p.Conference Paper

The effects of zinc on the characteristics of (Zn,Ca)TiO₃:Pr³⁺ phosphorsSUNG MOOK CHUNG; KANG, Seung-Youl; SHIN, Jae-Heon et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 94-97, issn 0022-0248, 4 p.Conference Paper

Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extractionKIM, Hong-Yeol; JUNG, Younghun; SUNG HYUN KIM et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 65-68, issn 0022-0248, 4 p.Conference Paper

Changes in efficiency of a solar cell according to various surface-etching shapes of silicon substrateMIN GU KANG; TARK, S; JEONG CHUL LEE et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 14-18, issn 0022-0248, 5 p.Conference Paper